MPSW92 datasheet(2/4 Pages) ONSEMI

Part #	MPSW92

Description	One Watt High Voltage Transistor(PNP Silicon)

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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2 / 4 page

MPSW92

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

(IC = –30 mAdc, VCE = –10 Vdc)

hFE

—

Collector–Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

VCE(sat)

—

–0.5

Vdc

Base–Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

VBE(sat)

—

–0.9

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)

—

MHz

Collector–Base Capacitance

(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

6.0

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

MPSW92 Datasheet(PDF) 2 Page - ON Semiconductor