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DF201S Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # DF201S
Description  2.0 AMPERE SINGLE PHASE GLASS PASSIVATION SURFACE MOUNT BRIDGE RECTIFIERS
PDF  2 Pages
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

DF201S Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  DF201S Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. DF201S Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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background image
DF2005S thru DF210S
Pb Free Plating Product
DF2005S thru DF210S
2.0 AMPERE SINGLE PHASE GLASS PASSIVATION SURFACE MOUNT BRIDGE RECTIFIERS
Pb
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Rev.10T
Features
• Glass passivation pellet(glass passivated chip junction)
• Low forward voltage drop
• High surge overload rating of 60 A peak
• Ideal for printed circuit board
Mechanical Data
• Case: Molded plastic, DB-S/DF-S
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
• Mounting position: Any
.045(1.14)
.335(8.51)
.009(0.25)
.205(5.2)
.195(5.0)
.035(0.89)
.316(8.05)
Unit : inch (mm)
DB-S/DF-S
■Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
UNIT DF2005S DF201S DF202S DF204S DF206S DF208S DF210S
ThinkiSemi device body marking code
Repetitive peak reverse voltage
V
RRM
V
50
100
200
400
600
800
1000
Average rectified output
current @
60Hz sine
wave, R-load, Ta=40℃
On glass-epoxi
substrate
IO
A
2
Surge(non-repetitive)forward current
@60H
z half sine wave, 1 cycle, Tj=25℃
IFSM
A
60
Current squared time
@1ms≤t<8.3ms Tj=25℃, Rating of per diode
I
2t
A
2s
15
Storage temperature
Tstg
℃
-55 ~+150
Junction temperature
Tj
℃
-55 ~+150
■Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL UNIT
TEST
CONDITIONS
Maximum instantaneous forward
voltage drop per diode
VF
V
IFM=1A
1.05
Maximum DC reverse current at
rated DC blocking voltage per diode
IRRM
μA VRM=VRRM
5
 
■Thermal Characteristics (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL UNIT
Thermal
Resistance
Between junction
and ambient,
On glass-epoxi
substrate
RθJ-A
℃
/W
68
Between junction
and lead
RθJ-L
15
Internal Configuration
DF2005S
DF201S
DF202S
DF204S
DF206S
DF208S
DF210S
DF2005S
DF201S
DF202S
DF204S
DF206S
DF208S
DF210S
DF2005S DF201S
DF202S
DF204S
DF206S
DF208S
DF210S


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