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DF201S Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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DF201S Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 2 page ![]() DF2005S thru DF210S Pb Free Plating Product DF2005S thru DF210S 2.0 AMPERE SINGLE PHASE GLASS PASSIVATION SURFACE MOUNT BRIDGE RECTIFIERS Pb © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Rev.10T Features • Glass passivation pellet(glass passivated chip junction) • Low forward voltage drop • High surge overload rating of 60 A peak • Ideal for printed circuit board Mechanical Data • Case: Molded plastic, DB-S/DF-S • Epoxy: UL 94V-0 rate flame retardant • Terminals: Leads solderable per MIL-STD-202, method 208 guaranteed • Mounting position: Any .045(1.14) .335(8.51) .009(0.25) .205(5.2) .195(5.0) .035(0.89) .316(8.05) Unit : inch (mm) DB-S/DF-S ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT DF2005S DF201S DF202S DF204S DF206S DF208S DF210S ThinkiSemi device body marking code Repetitive peak reverse voltage V RRM V 50 100 200 400 600 800 1000 Average rectified output current @ 60Hz sine wave, R-load, Ta=40℃ On glass-epoxi substrate IO A 2 Surge(non-repetitive)forward current @60H z half sine wave, 1 cycle, Tj=25℃ IFSM A 60 Current squared time @1ms≤t<8.3ms Tj=25℃, Rating of per diode I 2t A 2s 15 Storage temperature Tstg ℃ -55 ~+150 Junction temperature Tj ℃ -55 ~+150 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS Maximum instantaneous forward voltage drop per diode VF V IFM=1A 1.05 Maximum DC reverse current at rated DC blocking voltage per diode IRRM μA VRM=VRRM 5 ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Thermal Resistance Between junction and ambient, On glass-epoxi substrate RθJ-A ℃ /W 68 Between junction and lead RθJ-L 15 Internal Configuration DF2005S DF201S DF202S DF204S DF206S DF208S DF210S DF2005S DF201S DF202S DF204S DF206S DF208S DF210S DF2005S DF201S DF202S DF204S DF206S DF208S DF210S |
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