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P0908AT Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P0908AT Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  P0908AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. TC = 25 °C TC = 100 °C Junction-to-Ambient Operating Junction & Storage Temperature Range SYMBOL THERMAL RESISTANCE TYPICAL TC = 25 °C 80V Continuous Drain Current RqJC RqJA 1.5 RDS(ON) TC = 100 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 9mΩ @V GS = 10V 64A ID Junction-to-Case 50 mJ 33 83 72 W °C UNITS 160 41 ID IDM SYMBOL 64 ±20 LIMITS A Power Dissipation Tj, Tstg EAS L = 0.1mH 38 Avalanche Energy PD MAXIMUM °C / W Drain-Source Voltage VDS VGS Pulsed Drain Current 1 Avalanche Current 80 V IAS -55 to 150 REV 1.1 1 2014/10/30 |
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