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REF7025 Datasheet(PDF) 10 Page - Texas Instruments |
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REF7025 Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 19 page ![]() 8.2 Long-Term Stability One of the key parameters of the REF70 references is long-term stability. Typical characteristic expressed as: curves shows the typical drift value for the REF70 VOUT FKH is 18 ppm from 0 to 250 hours. It is important to understand that long-term stability is not ensured by design and that the output from the device may shift beyond the typical 18 ppm specification at any time. For systems that require highly stable output voltages over long periods of time, the designer should consider burning in the devices prior to use to minimize the amount of output drift exhibited by the reference over time. Time (Hr) 0 50 100 150 200 250 -40 -30 -20 -10 0 10 Figure 8-2. Long Term Stability FKH -250 hours (VOUT) 8.3 Thermal Hysteresis Thermal hysteresis is measured with the REF70 soldered to a PCB, similar to a real-world application. Thermal hysteresis for the device is defined as the change in output voltage after operating the device at 25°C, cycling the device through the specified temperature range, and returning to 25°C. The PCB was baked at 150°C for 30 minutes before thermal hysteresis was measured. Hysteresis can be expressed by Equation 1: 6 PRE POST HYST NOM | V V | V 10 ppm V § · u ¨ ¸ © ¹ (1) where • VHYST = thermal hysteresis (in units of ppm) • VNOM = the specified output voltage • VPRE = output voltage measured at 25°C pre-temperature cycling • VPOST = output voltage measured after the device has cycled from 25°C through the specified temperature range of –40°C to +125°C and returns to 25°C. 8.4 Power Dissipation The REF70 voltage references are capable of source and sink up to 10 mA of load current across the rated input voltage range. However, when used in applications subject to high ambient temperatures, the input voltage and load current must be carefully monitored to ensure that the device does not exceeded its maximum power dissipation rating. The maximum power dissipation of the device can be calculated with Equation 2: J A D JA T T P R T u (2) where • PD is the device power dissipation • TJ is the device junction temperature • TA is the ambient temperature • RθJA is the package (junction-to-air) thermal resistance REF70 SNAS781 – OCTOBER 2020 www.ti.com 10 Submit Document Feedback Copyright © 2020 Texas Instruments Incorporated Product Folder Links: REF70 |
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