P1070ATFS datasheet(2/9 Pages) UNIKC

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P1070ATF / P1070ATFS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

700

2.5

4.5

±100

100

0.7

0.85

2080

189

1.6

1.4

484

6.9

μC

1Pulse test : Pulse Width

 380 msec, Duty Cycle  2％.

2Independent of operating temperature.

3 Pulse width limited by maximum junction temperature.

IF = 10A, dlF/dt = 100A / mS

Gate Threshold Voltage

VGS = 0V, VDS = 0V, f = 1MHz

Rise Time

DYNAMIC

STATIC

LIMITS

UNITS

PARAMETER

IGSS

Drain-Source Breakdown Voltage

VGS(th)

RDS(ON)

VDS = 560V, VGS = 0V , TC = 100 °C

VDS = 0V, VGS = ±30V

SYMBOL

gfs

VDS = 10V, ID = 5A

VDD = 560V, VGS = 10V, ID = 10A

Ciss

Coss

Crss

Qgd

Qgs

VGS = 0V, VDS = 25V, f = 1MHz

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Gate Voltage Drain Current

Gate-Body Leakage

VDS = 700V, VGS = 0V, TC = 25 °C

Drain-Source On-State

Resistance

VDS = VGS, ID = 250mA

VGS = 10V, ID = 5A

IDSS

Gate-Source Charge

Reverse Transfer Capacitance

Gate Resistance

Output Capacitance

Gate-Drain Charge

Total Gate Charge

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

IF = 10A, VGS = 0V

VDD = 350V, ID = 10A, RG = 25Ω

td(on)

td(off)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Turn-On Delay Time

Turn-Off Delay Time

Fall Time

Input Capacitance

TEST CONDITIONS

Rev1.1

2015/7/10

P1070ATFS Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

P1070ATFS Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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