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P1503BVG Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P1503BVG Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 6 page  P1503BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% MAXIMUM Avalanche Current Junction-to-Lead °C / W RqJA 20 Junction-to-Ambient 50 IAS EAS SYMBOL PD TJ, TSTG W Avalanche Energy L = 0.1mH Pulsed Drain Current 1 TA = 25 °C Power Dissipation °C -55 to 150 RDS(ON) TA = 70 °C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID 15mΩ @VGS = 10V 10A VDS TA = 25 °C Junction & Storage Temperature Range ID IDM TA = 70 °C TYPICAL 1.6 2.5 5 10 RqJL 30V UNITS 40 8 10 ±20 Continuous Drain Current SYMBOL VGS LIMITS V A mJ 30 THERMAL RESISTANCE Ver 1.0 1 2012/4/13 |
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