P2003BVG datasheet(2/8 Pages) UNIKC

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P2003BVG

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.7

2.5

±100

18.4

524

132

2.2

9.7

4.5

1.5

2.3

2.5

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

DYNAMIC

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

VDS = 0V, VGS = ±25V

IDSS

Coss

Crss

VDS = 24V, VGS = 0V

VGS = 0V, VDS = 15V, f = 1MHz

Qg(VGS=4.5V)

Qgs

STATIC

Drain-Source Breakdown Voltage

VSD

IF = 8A, VGS = 0V

VDD = 15V,ID @ 1A,

VGEN = 10V, RG = 0.2Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

Continuous Current

Forward Voltage

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V(BR)DSS

TEST CONDITIONS

VGS = 10V, ID = 8A

Drain-Source On-State

Resistance

RDS(ON)

LIMITS

Qgd

Output Capacitance

Qg(VGS=10V)

Forward Transconductance

Ciss

VDS = 15V, ID = 8A

Input Capacitance

gfs

Total Gate Charge

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

VDS = 15V , ID =8A

VDS = 20V, VGS = 0V, TJ = 55 °C

PARAMETER

mΩ

VGS = 4.5V, ID = 6A

SYMBOL

UNITS

Zero Gate Voltage Drain Current

VGS = 0V, ID = 250mA

On-State Drain Current

ID(ON)

VDS = 5V, VGS = 10V

Gate-Body Leakage

VGS(th)

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

REV 1.1

2015/11/11

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