P2803HVG datasheet(1/5 Pages) UNIKC

Part #	P2803HVG

Description	N-Channel Enhancement Mode MOSFET

PDF	5 Pages

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Manufacturer	UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]

Direct Link	http://www.unikc.com.cn/

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P2803HVG

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

V(BR)DSS

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

THERMAL RESISTANCE RATINGS

UNITS

°C / W

1Pulse width limited by maximum junction temperature.

2Limited only by maximum temperature allowed.

3The value of Rq

JA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA = 25° C. The value in any given application depends on the user's specific board design.

TA = 70 °C

THERMAL RESISTANCE

SYMBOL

PD

TA = 25 °C

RqJA

MAXIMUM

Power Dissipation

SYMBOL

VDS

TA = 25 °C

LIMITS

ID

RDS(ON)

TA = 70 °C

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

Gate-Source Voltage

27.5mΩ @VGS = 10V

6.5A

ID

30V

Continuous Drain Current

2

Junction-to-Ambient

3

Operating Junction & Storage Temperature Range

Pulsed Drain Current

1,2

Avalanche Current

EAS

Avalanche Energy

L = 0.1mH

IAS

TJ, TSTG

A

TYPICAL

1.3

2

63

30

VGS

°C

-55 to 150

IDM

mJ

W

UNITS

30

5

±20

6.5

20

V

Ver 1.0

1

2012/4/13

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P2803HVG Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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