© 2000 IXYS All rights reserved

1 - 2

V

RSM

V

x V

RRM

Standard

Avalanche

V

V

V

Types

Types

900

800

DS 9-08F

1300

1300

1200

DS 9-12F

DSA 9-12F

1700

1750

1600

DSA 9-16F

1900

1950

1800

DSA 9-18F

x Only for Avalanche Diodes

Symbol

Test Conditions

Maximum Ratings

I

F(RMS)

T

VJ

= T

VJM

18

A

I

F(AVM)

T

11

A

P

RSM

DSA types, T

4.5

kW

I

FSM

T

VJ

= 45

°C;

t = 10 ms (50 Hz), sine

250

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

265

A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

200

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

220

A

T

VJ

= 45

°C

t = 10 ms (50 Hz), sine

310

V

R

= 0

t = 8.3 ms (60 Hz), sine

295

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

200

V

R

= 0

t = 8.3 ms (60 Hz), sine

190

T

VJ

-40...+180

°C

T

VJM

180

°C

T

stg

-40...+180

°C

M

d

Mounting torque

2.2-2.8

Nm

19-25

lb.in.

Weight

5g

V

RRM

= 800-1800 V

I

I

Features

q

International standard package,

JEDEC DO-203 AA

q

Planar glassivated chips

Applications

q

Supplies for DC power equipment

q

DC supply for PWM inverter

q

Field supply for DC motors

q

Battery DC power supplies

Advantages

q

Space and weight savings

q

Simple mounting

q

Improved temperature and power

cycling

q

Reduced protection circuits

Symbol

Test Conditions

Characteristic Values

I

R

T

VJ

= T

£

3mA

V

F

I

F

= 36 A; T

£

1.4

V

V

T0

For power-loss calculations only

0.85

V

r

T

T

VJ

= T

VJM

15

m

W

R

thJC

DC current

2.0

K/W

180

° sine

2.17

K/W

R

thJH

DC current

3.0

K/W

d

S

Creepage distance on surface

2.0

mm

d

A

Strike distance through air

2.0

mm

a

Max. allowable acceleration

100

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

DS

9

DSA 9

Rectifier Diode

Avalanche Diode

A

C

DO-203 AA

A = Anode

C = Cathode

C

A

M5