PA010BV datasheet(2/8 Pages) UNIKC

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PA010BV

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

100

1.3

1.8

2.3

±100

120

100

570

1.3

13.6

2.1

4.8

1.3

1.4

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

IGSS

Gate-Body Leakage

VGS(th)

Drain-Source Breakdown Voltage

mΩ

VGS = 4.5V, ID = 3A

SYMBOL

UNITS

VGS = 10V, ID = 3A

VGS = 0V, VDS = 0V, f = 1MHz

Gate-Drain Charge

VDS = 80V, VGS = 0V, TJ = 125 °C

PARAMETER

Qgd

Output Capacitance

Forward Transconductance

Gate Resistance

Gate-Source Charge

Total Gate Charge

Reverse Transfer Capacitance

Input Capacitance

Drain-Source On-State

Resistance

RDS(ON)

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V(BR)DSS

TEST CONDITIONS

IF = 3A, VGS = 0V

VDS = 50V,

ID @ 3A, VGS = 10V, RGEN = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

Diode Reverse Recovery Charge

Continuous Current

Forward Voltage

Diode Reverse Recovery Time

VSD

trr

Gate Threshold Voltage

VDS = VGS, ID = 250mA

LIMITS

VGS = 0V, ID = 250mA

VGS = 0V, VDS = 25V, f = 1MHz

VDS = 80V, VGS = 0V

gfs

Ciss

VDS = 5V, ID = 3A

Zero Gate Voltage Drain Current

Qgs

STATIC

DYNAMIC

IF = 3A, dl/dt = 100A /mS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

VDS = 50V , VGS = 10V,

ID =3A

Qrr

REV 1.0

2017/1/11

PA010BV Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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