IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072 4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 16N90

IXFX 16N90

Symbol

TestConditions

Characteristic Values

(T

min.

typ. max.

g

fs

V

6

10

S

C

iss

4500

pF

C

oss

V

GS

= 0 V, V

430

pF

C

rss

150

pF

t

d(on)

27

ns

t

r

V

GS

= 10 V, V

30

ns

t

d(off)

R

120

ns

t

f

30

ns

Q

g(on)

220

nC

Q

gs

V

GS

= 10 V, V

30

nC

Q

gd

85

nC

R

thJC

0.35 K/W

R

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

TestConditions

min.

typ. max.

I

S

V

16 A

I

SM

Repetitive;

64 A

pulse width limited by T

JM

V

SD

I

1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

T

200 ns

T

350 ns

Q

RM

T

µC

T

µC

I

RM

T

A

T

A

I

-di/dt = 100 A/µs,

V

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

TO-247 AD (IXFH) Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3