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© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

V

DGR

T

J

= 25

°C to 150°C; R

500

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

33N50

33

A

35N50

35

A

I

DM

T

C

= 25

°C,

33N50

132

A

pulse width limited by T

JM

35N50

140

A

I

AR

T

C

= 25

°C

33N50

30

A

35N50

35

A

E

AS

I

D

= 32 A

2.5

J

E

AR

T

C

= 25

°C45

mJ

dv/dt

I

S

£ I

5

V/ns

T

P

D

T

C

= 25

°C

416

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

M

d

Mounting torque

0.9/6

Nm/lb.in.

Weight

10

g

Features

flammability classification

rated

Applications

power supplies

Advantages

V

DSS

I

D25

R

DS(on)

IXFK33N50

500 V

33 A 0.16

W

IXFK35N50

500 V

35 A 0.15

W

t

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

500

V

V

DSS

temperature coefficient

0.102

%/K

V

GS(th)

V

DS

= V

2

4

V

V

-0.206

%/K

I

GSS

V

±200

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

200

mA

V

T

mA

R

DS(on)

V

33N50

0.16

W

35N50

0.15

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

97517D (07/00)

G = Gate

D = Drain

S = Source

TAB = Drain

S

G

D

TO-264 AA

D (TAB)

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

Preliminary data

IXYS reserves the right to change limits, test conditions, and dimensions.