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IXFH26N60

IXFK28N60

IXFT26N60

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

11

18

S

C

iss

5000

pF

C

oss

V

GS

= 0 V, V

600

pF

C

rss

250

pF

t

d(on)

30

ns

t

r

V

GS

= 10 V, V

43

ns

t

d(off)

R

110

ns

t

f

30

ns

Q

g(on)

250

300

nC

Q

gs

V

GS

= 10 V, V

33

45

nC

Q

gd

115

150

nC

R

thJC

26N60

0.35

K/W

28N60

0.30

K/W

R

thCK

TO-247

0.25

K/W

TO-264

0.15

K/W

I

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

26N60

26

A

28N60

28

A

I

SM

Repetitive; pulse width limited by T

JM

26N60

104

A

28N60

112

A

V

SD

I

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

t

rr

250

ns

Q

RM

1

mC

I

RM

10

A

TO-247 AD (IXFH) Outline

Dim. Millimeter

Inches

Min.

Max.

Min.

Max.

A

19.81 20.32

0.780 0.800

B

20.80 21.46

0.819 0.845

C

15.75 16.26

0.610 0.640

D

3.55

3.65

0.140 0.144

E

4.32

5.49

0.170 0.216

F

5.4

6.2

0.212 0.244

G

1.65

2.13

0.065 0.084

H

-

4.5

-

0.177

J

1.0

1.4

0.040 0.055

K

10.8

11.0

0.426 0.433

L

4.7

5.3

0.185 0.209

M

0.4

0.8

0.016 0.031

N

1.5

2.49

0.087 0.102

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46 BSC

.215 BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.

TO-264 AA (IXFK) Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.9

5.1

.193

.201

A

1

2.7

2.9

.106

.114

A

2

.02

.25

.001

.010

b

1.15

1.45

.045

.057

b

2

1.9

2.1

.75

.83

C

.4

.65

.016

.026

D

13.80

14.00

.543

.551

E

15.85

16.05

.624

.632

E

1

13.3

13.6

.524

.535

e

5.45 BSC

.215 BSC

H

18.70

19.10

.736

.752

L

2.40

2.70

.094

.106

L1

1.20

1.40

.047

.055

L2

1.00

1.15

.039

.045

L3

0.25 BSC

.010 BSC

L4

3.80

4.10

.150

.161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025