120

A

5.0

A

0.05

Characteristic

V

250

pF

25

°C/W

-55 to +150

°C

5.0A SCHOTTKY BARRIER DIODE

Features

!

Schottky Barrier Chip

!

Guard Ring Die Construction for

Transient Protection

!

High Current Capability

A

B

A

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

C

D

Mechanical Data

!

Case: DO-201AD, Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

!

Weight: 1.2 grams (approx.)

!

Mounting Position: Any

!

Marking: Type Number

!

Lead Free: For RoHS / Lead Free Version

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

Forward Voltage

Peak Reverse Current

At Rated DC Blocking Voltage

0.1

20

mA

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1 of 2

V

10

0.55

0.75

0.85

0.92

V

20

14

30

21

40

28

50

35

60

42

80

56

100

70

150

105

200

140

www.senocn.com

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

DO-201AD

Dim

Min

Max

A

25.4

—

B

8.50

9.50

C

1.20

1.30

D

5.0

5.60

All Dimensions in mm

DO-201AD

Dim

Min

Max

A

24.5

—

B

7.20

9.50

C

1.10

1.30

D

5.00

5.60

All Dimensions in mm

Symbol

MS502 MS503 MS504 MS505 MS506 MS508 MS510 MS515 MS520

Unit

MS502 – MS520

MS502 – MS520