IXSH10N60 datasheet(1/4 Pages) IXYS

Part #	IXSH10N60

Description	High Speed IGBT - Short Circuit SOA Capability

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C20

A

I

C90

T

C = 90°C10

A

I

CM

T

C = 25°C, 1 ms

40

A

SSOA

V

GE = 15 V, TJ = 125°C, RG = 150 Ω

I

CM = 20

A

(RBSOA)

Clamped inductive load, L = 300

µH

@ 0.8 V

CES

t

SC

V

GE = 15 V, VCE = 360 V, TJ = 125°C

10

µs

(SCSOA)

R

G = 82 Ω, non repetitive

P

C

T

C = 25°C

100

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

6 g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Features

• International standard packages

• Guaranteed Short Circuit SOA

capability

• Low V

CE(sat)

- for low on-state conduction losses

• High current handling capability

• MOS Gate turn-on

- drive simplicity

• Fast Fall Time for switching speeds

up to 20 kHz

Applications

• AC motor speed control

• Uninterruptible power supplies (UPS)

• Welding

Advantages

• Easy to mount with 1 screw

(isolated mounting screw hole)

• High power density

Preliminary data

High Speed IGBT

Short Circuit SOA Capability

95562B(10/96)

C (TAB)

G

C

E

TO-247 AD

G = Gate

C = Collector

E = Emitter

Tab = Collector

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 250

µA, V

GE = 0 V

600

V

GE(th)

I

C

= 750

µA, V

CE = VGE

3.5

6.5

V

I

CES

V

CE

= 0.8 • V

CES

T

J = 25°C

200

µA

V

GE

= 0 V

T

J = 125°C1

mA

I

GES

V

CE

= 0 V, V

GE = ±20 V

±100 nA

V

CE(sat)

I

C

= I

C90, VGE = 15 V

10N60

2.5

V

10N60A

3.0

V

CES

I

C(25)

V

CE(sat)

600 V

20 A

2.5 V

600 V

20 A

3.0 V

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