IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: 408-982-0700, Fax: 408-496-0670

IXSH 40N60

IXSM 40N60

IXSH 40N60A

IXSM 40N60A

Time - Seconds

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

V

0

100

200

300

400

500

600

700

0.01

0.1

1

10

100

T

R

dV/dt < 6V/ns

Q

0

50

100

150

200

250

0

3

6

9

12

15

I

V

R

0

10203040

50

0

2

4

6

8

10

0

200

400

600

800

1000

I

0

102030

40506070

80

0

250

500

750

1000

0

3

6

9

12

Single Pulse

D = Duty Cycle

D=0.01

D=0.5

D=0.2

D=0.02

t

hi-speed

E

hi-speed

T

R

t

E

T

I

D=0.05

D=0.1

Fig.11 Transient Thermal Impedance

Fig.9 Gate Charge Characteristic Curve

Fig.10

Turn-Off Safe Operating Area

Fig.7 Turn-Off Energy per Pulse and

Fig.8 Dependence of Turn-Off Energy

Fall Time on Collector Current

Per Pulse and Fall Time on R

G