PB600BA datasheet(2/8 Pages) UNIKC

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PB600BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.7

2.5

±100

17.5

706

103

3.1

2.6

3.6

1.5

1.1

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Drain-Source On-State

Resistance

RDS(ON)

VGS =10V, ID = 9A

IF = 9A, dlF/dt = 100A / μS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

LIMITS

VGS = 0V, ID = 250mA

VDS =24V, VGS = 0V

STATIC

Drain-Source Breakdown Voltage

VGS = 0V, VDS = 15V, f = 1MHz

mΩ

DYNAMIC

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VDD = 15V

ID @ 9A, VGEN = 10V, RG = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

Qgs

TEST CONDITIONS

VSD

trr

IF = 9A, VGS = 0V

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V(BR)DSS

PARAMETER

VDS = 15V , ID = 9A

Output Capacitance

gfs

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Ciss

VDS =10V, ID = 9A

Input Capacitance

Qgd

Qg(VGS=10V)

VGS = 4.5V, ID = 9A

SYMBOL

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

UNITS

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

Total Gate Charge

Qg(VGS=4.5V)

Gate-Body Leakage

VGS(th)

Forward Transconductance

VDS =20V, VGS = 0V, TJ = 55°C

REV 1.1

2018/3/30

PB600BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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