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PB606BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PB606BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page  PB606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100%RG TEST PDFN 2X2S 100%UIL TEST ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS °C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. RqJA Gate-Source Voltage ID TA= 70°C Operating Junction & Storage Temperature Range SYMBOL Pulsed Drain Current 1 Avalanche Current IAS 12.8 EAS THERMAL RESISTANCE TYPICAL PD ID TA = 25 °C 30V Continuous Drain Current TA= 70 °C PARAMETERS/TEST CONDITIONS RDS(ON) 16mΩ @V GS = 10V 7.8A Drain-Source Voltage TA= 25 °C Power Dissipation Tj, Tstg W UNITS 21 6.2 8.2 mJ 1 30 ±20 IDM SYMBOL 7.8 LIMITS A V VGS VDS V MAXIMUM Junction-to-Ambient 2 Avalanche Energy L = 0.1 mH 1.5 80 °C -55 to 150 REV 1.0 1 2014/12/17 |
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