PC015BD datasheet(2/8 Pages) UNIKC

2 / 8 page

PC015BD

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

150

1.6

3.0

±100

285

450

235

300

991

1.3

8.5

1.3

168

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Reverse Recovery Charge

trr

IF = 7A, dlF/dt = 100A / ms

Qrr

Reverse Recovery Time

PARAMETER

SYMBOL

IGSS

TEST CONDITIONS

Gate-Body Leakage

IDSS

gfs

VDS = 120V, VGS = 0V

VDS = 100V, VGS = 0V , TJ = 70 °C

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±20V

VGS = 10V, ID = 7A

Drain-Source Breakdown Voltage

VGS = 4.5V, ID = 6A

VDS = 5V, ID = 7A

VGS(th)

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Zero Gate Voltage Drain Current

VDS = 75V, VGS = 10V,

ID = 7A

Qgd

Qgs

Crss

VGS = 0V, VDS = 0V, f = 1MHZ

Ciss

Coss

On-State Drain Current

RDS(ON)

VSD

Total Gate Charge

Input Capacitance

Output Capacitance

Gate Threshold Voltage

IF = 1.8A, VGS = 0V

STATIC

mΩ

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

VGS = 0V, VDS = 25V, f = 1MHz

Gate Resistance

ID(ON)

VDS = 5V, VGS = 10V

Drain-Source On-State

Resistance

DYNAMIC

Fall Time

Forward Voltage

Continuous Current

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

LIMITS

UNITS

VDS = 75V,

ID@ 7A, VGS = 10V, RGEN = 6Ω

td(on)

td(off)

Rev 1.2

2016/1/29

PC015BD Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PC015BD Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL