PC015BDA datasheet(2/8 Pages) UNIKC

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PC015BDA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

150

1.3

1.8

2.3

±100

225

450

220

300

614

1.4

1.6

5.1

6.4

1.3

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

Reverse Recovery Charge

trr

IF = 6A, dl/dt = 100A / ms

Qrr

Reverse Recovery Time

PARAMETER

SYMBOL

IGSS

TEST CONDITIONS

Gate-Body Leakage

gfs

VDS = 120V, VGS = 0V

VDS = 100V, VGS = 0V , TJ = 70 °C

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±20V

VGS = 10V, ID = 6A

Drain-Source Breakdown Voltage

VGS = 4.5V, ID = 6A

VDS = 10V, ID = 6A

VGS(th)

Forward Transconductance

VGS = 0V, ID = 250mA

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

VDS = 75V, VGS = 10V,

ID = 6A

Qgd

Qgs

Crss

VGS = 0V, VDS = 0V, f = 1MHZ

Ciss

Coss

RDS(ON)

VSD

Total Gate Charge

Input Capacitance

Output Capacitance

Gate Threshold Voltage

IF = 6A, VGS = 0V

STATIC

mΩ

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

VGS = 0V, VDS = 25V, f = 1MHz

Gate Resistance

Drain-Source On-State

Resistance

DYNAMIC

Fall Time

Forward Voltage

Continuous Current

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

LIMITS

UNITS

VDD = 75V,

ID @ 6A, VGS = 10V, RGS = 6Ω

td(on)

td(off)

Rev 1.0

2018/8/1

PC015BDA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PC015BDA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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