PC015HV datasheet(2/5 Pages) UNIKC

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PC015HV

Dual N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

150

±100

208

300

235

450

1010

1.2

3.2

1.6

1.3

43.8

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

mΩ

VGS = 10V, ID = 1.6A

SYMBOL

UNITS

Gate-Body Leakage

VGS(th)

Forward Transconductance

VGS = 4.5V, ID = 1.4A

Drain-Source On-State

Resistance

RDS(ON)

LIMITS

VGS = 0V, ID = 250mA

Gate Threshold Voltage

VDS = VGS, ID = 250mA

VDS = 100V, VGS = 0V, TJ = 55 °C

PARAMETER

Total Gate Charge

Ciss

VDS = 10V, ID = 1.6A

Input Capacitance

Qgd

Output Capacitance

gfs

Zero Gate Voltage Drain Current

IGSS

Rise Time

Turn-Off Delay Time

Fall Time

V(BR)DSS

TEST CONDITIONS

VDS = 0.5V(BR)DSS, VGS = 10V,

ID = 1.6A

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

IF = 1.6A, VGS = 0V

VDD = 30V,

ID @ 1.6A, VGS = 10V, RGEN = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 °C)

td(on)

td(off)

Turn-On Delay Time

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

Qgs

DYNAMIC

VDS = 120V, VGS = 0V

Drain-Source Breakdown Voltage

VGS = 0V, VDS = 25V, f = 1MHz

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

STATIC

IF = 1.6A, dl/dt = 100A / mS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

On-State Drain Current

ID(ON)

VDS = 5V, VGS = 10V

Qrr

Reverse Recovery Charge

REV 1.0

2014/12/3

PC015HV Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PC015HV Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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