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PC561BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PC561BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  PC561BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2 The value of Rq JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper. 3The Power dissipation is based on Rq JA t ≦10s value. 73 t ≦10s Junction-to-Ambient 2 Junction-to-Ambient 2 Steady-State RqJA THERMAL RESISTANCE SYMBOL PD TJ, TSTG TA = 25 °C Operating Junction & Storage Temperature Range TYPICAL 1.6 2.5 MAXIMUM Power Dissipation 3 TA = 70 °C SYMBOL LIMITS IAS Pulsed Drain Current 1 7 -12 Avalanche Current EAS RDS(ON) TA = 70 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 45mΩ @V GS = -10V -5.7A ID -30V ID IDM Continuous Drain Current Avalanche Energy RqJA VGS -5.7 TA = 25 °C L = 0.1mH V A RqJC UNITS -20 -4.5 ±20 °C -55 to 150 mJ W Steady-State Junction-to-Case 18 °C / W 50 REV 1.0 1 2016/5/31 |
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