PD515BA datasheet(2/8 Pages) UNIKC

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PD515BA

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-20

-0.3

-0.7

-1

±100

-1

-10

120

576

6.7

0.8

1.8

-20

-1.2

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is -10A.

UNITS

IF = -2.5A, dlF/dt = 100A /mS

VDS = 0V, VGS = ±8V

IDSS

Coss

Crss

td(off)

VGS =-2.5V, ID =-2A

trr

mΩ

IF = -2.5A, VGS = 0V

STATIC

Drain-Source Breakdown Voltage

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Turn-Off Delay Time

Gate-Drain Charge

VDS =-10V ,ID @ -2.5A,

VGS=-4.5V,RGEN=6Ω

td(on)

V(BR)DSS

Gate Threshold Voltage

VDS = VGS, ID = -250mA

VGS = 0V, ID = -250mA

Qg(VGS = -2.5V)

Ciss

Turn-On Delay Time

Drain-Source On-State

Resistance

RDS(ON)

VGS =0V, VDS = 0V, f = 1MHz

Qgd

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

Fall Time

VSD

Rise Time

Qgs

Gate-Source Charge

Reverse Transfer Capacitance

Qg(VGS = -4.5V)

Input Capacitance

Total Gate Charge

VDS =-10V,

ID = -2.5A

Gate Resistance

VGS = 0V, VDS = -10V, f = 1MHz

SYMBOL

Output Capacitance

DYNAMIC

VGS =-1.8V, ID =-1A

VDS =-16V, VGS = 0V

VGS(th)

PARAMETER

Zero Gate Voltage Drain Current

gfs

LIMITS

IGSS

Gate-Body Leakage

VDS = -5V, ID = -2.5A

TEST CONDITIONS

Forward Transconductance

VDS =-10V, VGS = 0V, TJ = 125°C

VGS =-4.5V, ID =-2.5A

REV 1.0

2017/1/12

PD515BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PD515BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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