PD517BA datasheet(2/5 Pages) UNIKC

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PD517BA

P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

-30

-1

-1.7

-3

±100

-1

-10

15.4

9.8

2740

376

321

2.6

8.7

-51

-1.2

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 40A.

VDS = -5V, ID = -12A

TEST CONDITIONS

UNITS

Gate-Body Leakage

VGS(th)

Forward Transconductance

VDS =-20V, VGS = 0V, TJ = 125°C

VGS =-4.5V, ID =-9A

gfs

VGS = 0V, VDS = -15V, f = 1MHz

SYMBOL

Output Capacitance

DYNAMIC

VDS =-24V, VGS = 0V

VGS =-10V, ID =-12A

Qgs

Gate-Source Charge

Reverse Transfer Capacitance

Qg(VGS = 10V)

Input Capacitance

Total Gate Charge

Qg(VGS =4.5V)

Ciss

Rise Time

Qgd

VDS =-15V,VGS =-10V,

ID = -12A

Fall Time

Turn-On Delay Time

Drain-Source On-State

Resistance

RDS(ON)

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

VDS = VGS, ID = 250mA

VGS = 0V, ID = 250mA

Turn-Off Delay Time

Gate-Drain Charge

VDS =-15V ,ID

@ -12A,

VGS=-10V,RGEN=6Ω

td(on)

LIMITS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

mΩ

IF = -12A, VGS = 0V

V(BR)DSS

IF = -12A, dlF/dt = 100A /mS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

td(off)

trr

Gate Threshold Voltage

Gate Resistance

VGS =0V, VDS = 0V, f = 1MHz

PARAMETER

Zero Gate Voltage Drain Current

IGSS

STATIC

Drain-Source Breakdown Voltage

REV 1.0

2014/5/19

PD517BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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