PD616BA datasheet(2/8 Pages) UNIKC

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PD616BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.35

1.7

±100

9.5

5.6

821

159

2.2

17.2

9.2

1.9

5.2

1.2

8.6

1.7

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 30A

Qg(VGS=4.5V)

Forward Voltage

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

VDS = 15V , ID = 20A

Qgs

VDS = 15V ,

ID @ 20A, VGS = 10V, RGEN = 6Ω

Qgd

Total Gate Charge

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

DYNAMIC

mΩ

Input Capacitance

Output Capacitance

RDS(ON)

VGS = 10V , ID = 20A

Qg(VGS=10V)

Drain-Source On-State

Resistance

Gate-Drain Charge

Gate-Source Charge

UNITS

V(BR)DSS

LIMITS

VGS = 0V, ID = 250mA

VDS = 20V, VGS = 0V , TJ = 125 °C

gfs

Drain-Source Breakdown Voltage

Reverse Recovery Time

IF = 20A, VGS = 0V

VSD

trr

IF = 20A, dlF/dt = 100A / mS

Qrr

Reverse Recovery Charge

Continuous Current

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

VGS(th)

VDS = 0V, VGS = ±20V

td(on)

IDSS

Coss

Crss

VDS = 24V, VGS = 0V

TEST CONDITIONS

STATIC

PARAMETER

SYMBOL

VGS = 0V, VDS = 15V, f = 1MHz

Gate-Body Leakage

Reverse Transfer Capacitance

Ciss

VDS = 5V, ID = 20A

Forward Transconductance

VGS = 4.5V, ID = 15A

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

REV 1.0

2017/1/12

PD616BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PD616BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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