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PD618BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PD618BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  PD618BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A. °C / W Junction & Storage Temperature Range SYMBOL °C -55 to 150 Junction-to-Ambient RqJA 62.5 IDM TC = 100 °C Power Dissipation Tj, Tstg Gate-Source Voltage ID EAS THERMAL RESISTANCE TYPICAL PD 5.5mΩ @V GS = 10V 74A Pulsed Drain Current 1 Avalanche Current IAS 31 TC = 25 °C ID TC = 25 °C 30V Continuous Drain Current 2 TC = 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 54 W UNITS 150 46 48 mJ 21 30 ±20 SYMBOL 74 LIMITS A VGS VDS V MAXIMUM Junction-to-Case RqJC 2.3 L = 0.1mH Avalanche Energy REV 1.0 1 2016/4/13 |
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