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PD628BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PD628BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  PD628BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. °C / W RqJA 62.5 Junction-to-Case RqJC Gate-Source Voltage ID IAS Pulsed Drain Current 1 Drain-Source Voltage 15 EAS THERMAL RESISTANCE TC= 100°C Junction & Storage Temperature Range SYMBOL ID TC= 25 °C 30V Continuous Drain Current TC= 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) 14mΩ @V GS = 10V 27A W TYPICAL PD LIMITS VDS SYMBOL 100 17 11.3 mJ 7 A Junction-to-Ambient IDM V UNITS 30 ±20 18 27 °C -55 to 150 MAXIMUM V VGS TC= 25 °C Avalanche Current 7 Avalanche Energy L=0.1mH Power Dissipation Tj, Tstg REV 1.0 1 2015/9/23 |
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