PD636BA datasheet(2/8 Pages) UNIKC

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PD636BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.8

2.3

±100

765

143

16.5

8.9

2.2

1.2

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 20A.

UNITS

SYMBOL

Input Capacitance

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

Gate-Body Leakage

TEST CONDITIONS

PARAMETER

Output Capacitance

Qg(VGS=10V)

DYNAMIC

VDS =24V, VGS = 0V

VDS =5V, ID =20A

mΩ

gfs

Fall Time

VSD

VDS = 15V , ID @ 20A,

VGS=10V, RGEN=6Ω

td(on)

td(off)

Ciss

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

V(BR)DSS

Qgs

Qgd

trr

IF = 20A, VGS = 0V

VGS = 0V, ID = 250mA

VDS =15V, ID = 20A

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

VGS = 0V, VDS = 15V, f = 1MHz

VGS =4.5V, ID =15A

IF = 20A, dlF/dt = 100A / mS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

LIMITS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

VGS(th)

Forward Transconductance

VDS =20V, VGS = 0V, TJ = 125°C

Total Gate Charge

Qg(VGS=4.5V)

Drain-Source On-State

Resistance

RDS(ON)

VGS =10V, ID =20A

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

STATIC

REV 1.1

2018/5/24

PD636BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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