PD648BA datasheet(2/5 Pages) UNIKC

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PD648BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.75

2.3

±100

3.9

5.2

3.9

2010

325

205

1.1

41.3

21.5

6.2

1.3

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3 Package limitation current is 55A.

Gate-Body Leakage

VGS(th)

VGS = 10V, ID = 20A

Drain-Source On-State

Resistance

RDS(ON)

mΩ

VGS = 4.5V, ID = 15A

SYMBOL

UNITS

Zero Gate Voltage Drain Current

IGSS

Gate Threshold Voltage

VDS = VGS, ID = 250mA

VDS = 20V, VGS = 0V, TJ = 125 °C

PARAMETER

Ciss

VDS =5V, ID = 20A

Input Capacitance

Qgd

Output Capacitance

Qg(VGS=10V)

Forward Transconductance

gfs

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

V(BR)DSS

TEST CONDITIONS

VSD

trr

IF = 20A, VGS = 0V

VDS = 15V,

ID @ 20A, VGS = 10V, RGEN = 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

Qgs

DYNAMIC

VDS = 24V, VGS = 0V

Qrr

Diode Reverse Recovery Charge

Continuous Current

Forward Voltage

Diode Reverse Recovery Time

STATIC

Drain-Source Breakdown Voltage

IF = 20A, dlF/dt = 100A / μS

VDS = 0V, VGS = ±20V

IDSS

Coss

Crss

LIMITS

VGS = 0V, ID = 250mA

VGS = 0V, VDS = 15V, f = 1MHz

Total Gate Charge

Qg(VGS=4.5V)

Gate Resistance

VGS = 0V, VDS = 0V, f = 1MHz

VDS = 15V , ID =20A

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

REV 1.0

2014-3-4

PD648BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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