PE614DX datasheet(2/5 Pages) UNIKC

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PE614DX

Dual N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

0.35

0.67

8.5

12.5

8.7

10.2

13.7

11.5

12.7

14.2

20.2

1105

198

169

1.4

14.8

1.2

5.4

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 7A.

VDS = 5V, ID = 3A

TEST CONDITIONS

VGS = 2.5V, ID = 3A

UNITS

gfs

Gate-Body Leakage

VGS(th)

VGS =4.5V, ID =3A

VGS = 3.9V, ID = 3A

LIMITS

Drain-Source Breakdown Voltage

Gate-Source Charge

Reverse Transfer Capacitance

Qg(VGS = 4.5V)

Input Capacitance

Total Gate Charge

Qg(VGS = 3.9V)

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

Output Capacitance

VDS =10V,ID = 3A

Qgs

SYMBOL

VDS =16V, VGS = 0V

VGS = 1.8V, ID = 3A

Forward Transconductance

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

Fall Time

td(on)

td(off)

Drain-Source On-State

Resistance

RDS(ON)

Turn-On Delay Time

Rise Time

DYNAMIC

VDS = VGS, ID = 250mA

VGS = 0V, ID = 250mA

Qgd

IF = 3A, dlF/dt = 100A / μS,

VGS = 0V

VDS = 0V, VGS = ±8V

IDSS

Coss

Crss

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

mΩ

IF = 3A, VGS = 0V

Gate-Drain Charge

VDD = 10V,

ID @ 3A, VGS = 4.5V, RGEN = 6Ω

Turn-Off Delay Time

Gate Threshold Voltage

PARAMETER

Zero Gate Voltage Drain Current

IGSS

V(BR)DSS

STATIC

VDS =10V, VGS = 0V, TJ = 125°C

REV 1.2

2014/6/24

PE614DX Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PE614DX Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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