PE600BA datasheet(2/8 Pages) UNIKC

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PE600BA

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

MIN

TYP

MAX

1.3

1.75

2.3

±100

10.2

7.8

9.8

620

108

2.5

3.8

1.1

1Pulse test : Pulse Width

 300 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 16A.

VDS = VGS, ID = 250mA

VGS = 0V, ID = 250mA

UNITS

Gate-Body Leakage

VGS(th)

V(BR)DSS

IF = 9A, dlF/dt = 100A / mS

Coss

Drain-Source Breakdown

Voltage

VGS = 10V , ID =9A

Qgs

DYNAMIC

mΩ

VDS = 24V, VGS = 0V

VGS = 4.5V, ID = 9A

Zero Gate Voltage Drain

Current

Gate Resistance

Qrr

Reverse Recovery Charge

Continuous Current

Forward Voltage

Reverse Recovery Time

VSD

trr

IF = 9A, VGS = 0V

VDD= 15V,

ID @ 9A, VGEN = 10V, RG= 6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

td(on)

td(off)

Turn-On Delay Time

Turn-Off Delay Time

Fall Time

VDS = 15V , ID = 9A

VGS = 0V, VDS = 15V, f = 1MHz

Qgd

Forward Transconductance

VDS = 10V, ID = 9A

RDS(ON)

Rise Time

VGS = 0V, VDS = 0V, f = 1MHz

VDS = 0V, VGS = ±20V

gfs

Qg(VGS=4.5V)

Crss

Output Capacitance

Drain-Source On-State

Resistance

STATIC

TEST CONDITIONS

LIMITS

IDSS

Gate-Drain Charge

Gate-Source Charge

Reverse Transfer Capacitance

Total Gate Charge

Qg(VGS=10V)

Input Capacitance

Gate Threshold Voltage

PARAMETER

IGSS

Ciss

VDS = 20V, VGS = 0V, TJ =55 °C

SYMBOL

REV 1.2

2018/4/28

PE600BA Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

PE600BA Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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