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STP135N10 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP135N10
Description  N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP135N10 Datasheet(HTML) 3 Page - STMicroelectronics

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STB135N10 STP135N10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1 )Pulse width limited by safe operating area.
(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 67.5 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
TBD
TBD
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 50 V ID= 135 A VGS= 5 V
TBD
TBD
TBD
95
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 67.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (1)
Source-drain Current
Source-drain Current (pulsed)
135
540
A
A
VSD (5)
Forward On Voltage
ISD = 135 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 135 A
di/dt = 100A/µs
VDD = 25 V
Tj = 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
µC
A
ELECTRICAL CHARACTERISTICS (continued)



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