STS5PF20V datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STS5PF20V

2/8

ABSOLUTE MAXIMUM RATINGS

( ) Pulsewidth limitedby safeoperating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

VDGR

Drain-gate Voltage (RGS =20kΩ)

VGS

Gate- source Voltage

± 8

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

3.1

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

2.5

Rthj-amb

Thermal Resistance Junction-ambient Max

°C/W

Max. Operating Junction Temperature

–55 to 150

°C

Tstg

Storage Temperature

–55 to 150

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250 µA, VGS =0

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC =125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 8V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

0.45

RDS(on)

Static Drain-source On

Resistance

VGS =4.5V, ID =2.5 A

0.065

0.080

Ω

VGS =2.5V, ID =2.5 A

0.085

0.10

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15 V , ID = 2.5 A

6.6

Ciss

Input Capacitance

VDS =15 V, f =1 MHz, VGS =0

412

Coss

Output Capacitance

179

Crss

Reverse Transfer

Capacitance

42.5

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