SI7212DN datasheet(2/6 Pages) VISHAY

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Si7212DN

Vishay Siliconix

www.vishay.com

Document Number: 73128

S-51128—Rev. B, 13-Jun-05

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

1.6

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 6.8 A

0.030

0.036

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 6.6 A

0.032

0.039

Forward Transconductancea

gfs

VDS = 10 V, ID = 6.8 A

Diode Forward Voltagea

VSD

IS = 2.2 A, VGS = 0 V

0.8

1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 6.8 A

Gate-Drain Charge

Qgd

1.7

Gate Resistance

f = 1 MHz

1.5

3.0

4.5

Turn-On Delay Time

td(on)

Rise Time

VDD = 15 V, RL = 15 W

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 2.2 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10 thru 3 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

2 V

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