IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961 5,187,117 5,486,715

4,850,072

4,931,844

5,034,796

5,063,307 5,237,481 5,381,025

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

18

S

C

iss

5600

pF

C

oss

V

800

pF

C

rss

200

pF

t

d(on)

25

ns

t

r

V

45

ns

t

d(off)

R

250

ns

t

f

75

ns

Q

g

110

nC

Q

gs

V

15

nC

Q

gd

40

nC

R

thJK

with 30

µm heat transfer paste

0.7 K/W

d

S

Creepage distance on surface

17

mm

d

A

Strike distance through air

9.6

mm

a

Maximum allowable acceleration

50

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

20

A

I

SM

Repetitive; pulse width limited by T

JM

80

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

600

ns

VMM 15-045

Dimensions in mm (1 mm = 0.0394")