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CMBTA43 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CMBTA43 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E ABSOLUTE MAXIMUM RATINGS CMBT A42 A43 Collector–base voltage (open emitter) VCBO max. 300 200 V Collector–emitter voltage (open base) VCEO max. 300 200 V Emitter–base voltage (open collector) VEBO max. 6 V Collector current (d.c.) IC max. 500 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW Junction temperature Tj max. 150 ° C D.C. current gain IC = 10 mA; VCE = 10 V hFE min. 40 Transition frequency at f = 35 MHz IC = 10 mA; VCE = 20 V fT min. 50 MHz Feedback capacitance at f = 1 MHz IC = 0; VCE = 20 V Cre max. 3 4 pF CMBTA42 CMBTA43 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
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