| Electronic Components Datasheet Search |
|
LU024 Datasheet(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
|
|
|||||||||||||||||||||||||||||
LU024 Datasheet(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
|
2 / 7 page ![]() Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 3.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 12 A 0.0 Ω VGS = 4.5 V, ID = 10 A 0.0 3 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 110 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = 30 V, f = 1 MHz 1100 pF Output Capacitance Coss 281 Reverse Transfer Capacitance Crss 130 Total Gate Chargec Qg VDS = 30 V, VGS = 10 V, ID = 10 A 46 nC VDS = 30 V, VGS = 4.5 V, ID = 10 A 28 Gate-Source Chargec Qgs 7 Gate-Drain Chargec Qgd 6.7 Gate Resistance Rg f = 1 MHz 0.4 2 4 Ω Turn-On Delay Timec td(on) VDD = 30 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 816 ns Rise Timec tr 918 Turn-Off Delay Timec td(off) 35 53 Fall Timec tf 918 Drain-Source Body Diode Ratings and Characteristics TC = 25 °C b Continuous Current IS 50 A Pulsed Current ISM 100 Forward Voltagea VSD IF = 10 A, VGS = 0 V 0.75 1.5 V Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs 34 51 ns Peak Reverse Recovery Current IRM(REC) 23 A Reverse Recovery Charge Qrr 34 51 nC .0 32 7 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw LU024 2 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |