STL76DN4LF7AG datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STL76DN4LF7AG

Description	Automotive-grade dual N-channel 40 V, 5 mΩ typ., 40 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DI

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 16 page

Electrical characteristics

STL76DN4LF7AG

4/16

DocID029186 Rev 5

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/Off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 1 mA, VGS = 0 V

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS = 40 V

µA

IGSS

Gate-body leakage

current

VGS = ±20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS , ID

= 250 μA

1.5

2.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID= 10 A

mΩ

VGS = 4.5 V, ID= 10 A

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

956

Coss

Output capacitance

241

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 20 V, ID = 20 A,

VGS = 0 to 10 V (see Figure 14:

"Test circuit for gate charge

behavior")

Qgs

Gate-source charge

3.2

Qgd

Gate-drain charge

4.3

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 32 V, ID = 10 A,

= 4.7 Ω, VGS = 10 V (see

Figure 13: "Test circuit for

resistive load switching times"

and Figure 18: "Switching time

waveform")

Rise time

4.3

td(off)

Turn-off delay time

Fall time

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