TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

3

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.01

0.5

0.2

0.1

0.05

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1.0 k

500

Z

θJC(t) = r(t) RθJC

R

θJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 5. TIP115, 116, 117

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

4.0

2.0

1.0

0.1

10

60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

dc

1 ms

40

TIP115

TIP116

TIP117

SECONDARY BREAKDOWN LIMITED

5 ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 6. TIP110, 111, 112

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

4.0

2.0

1.0

0.1

10

80 100

60

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

dc

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

200

0.04

VR, REVERSE VOLTAGE (VOLTS)

10

0.4 0.6 1.0

2.0

40

4.0

0.06 0.1

0.2

70

30

TC = 25°C

Cib

50

Cob

PNP

NPN

Figure 7. Capacitance

100

20

6.0 10

20