TIP140 TIP141 TIP142 TIP145 TIP146 TIP147

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0)

TIP140, TIP145

TIP141, TIP146

TIP142, TIP147

VCEO(sus)

60

80

100

—

—

—

—

—

—

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP140, TIP145

(VCE = 40 Vdc, IB = 0)

TIP141, TIP146

(VCE = 50 Vdc, IB = 0)

TIP142, TIP147

ICEO

—

—

—

—

—

—

2.0

2.0

2.0

mA

Collector Cutoff Current

(VCB = 60 V, IE = 0)

TIP140, TIP145

(VCB = 80 V, IE = 0)

TIP141, TIP146

(VCB = 100 V, IE = 0)

TIP142, TIP147

ICBO

—

—

—

—

—

—

1.0

1.0

1.0

mA

Emitter Cutoff Current (VBE = 5.0 V)

IEBO

—

—

2 0

mA

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 5.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

hFE

1000

500

—

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 5.0 A, IB = 10 mA)

(IC = 10 A, IB = 40 mA)

VCE(sat)

—

—

—

—

2.0

3.0

Vdc

Base–Emitter Saturation Voltage

(IC = 10 A, IB = 40 mA)

VBE(sat)

—

—

3.5

Vdc

Base–Emitter On Voltage

(IC = 10 A, VCE = 4.0 Vdc)

VBE(on)

—

—

3.0

Vdc

SWITCHING CHARACTERISTICS

Resistive Load (See Figure 1)

Delay Time

(V

30 V I

5 0 A

td

—

0.15

—

µs

Rise Time

(VCC = 30 V, IC = 5.0 A,

IB = 20 mA Duty Cycle v 20%

tr

—

0.55

—

µs

Storage Time

IB = 20 mA, Duty Cycle v 2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25_C)

ts

—

2.5

—

µs

Fall Time

B1

B2,

CB

, J

)

tf

—

2.5

—

µs

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle v 2.0%.

Figure 1. Switching Times Test Circuit

10

0.2

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

5.0

2.0

0.5

0.1

0.5

1.0

3.0

5.0

10

20

0.2

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+12 V

V1

appox.

– 8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

µs

0

RB

51

D1

+ 4.0 V

VCC

– 30 V

RC

TUT

≈ 8.0 k

≈ 40

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

For NPN test circuit reverse diode and voltage polarities.

1.0