STL100NH3LL datasheet(3/10 Pages) STMICROELECTRONICS

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STL100NH3LL

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

Note:

(1)The value is according Rthj-pcb

(2)The value is according Rthj-c

(3) Pulse width limited by safe operating area.

(4) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec

(5) Pulsed: Pulse duration = 300

µs, duty cycle 1.5%

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (5)

Forward Transconductance

VDS = 10 V, ID=12,5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

4450

655

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V, ID = 12.5 A,

RG= 4.7 Ω VGS = 10 V

(see Figure 15)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 15V, ID = 25 A,

VGS = 4.5V

(see Figure 17)

12.5

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (3)

Source-drain Current

Source-drain Current (pulsed)

100

VSD (4)

Forward On Voltage

ISD = 25 A, VGS = 0

1.3

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 25 A, di/dt = 100A/µs

VDD = 25 V, Tj = 150°C

(see test circuit, Figure 16)

2.1

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