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2SC1060 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1060 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION · With TO-220 package · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) · Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 2A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching regulators · DC-DC convertor · General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Similar Part No. - 2SC1060 |
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Similar Description - 2SC1060 |
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