1

Transistor

Marking symbol

: E

2SA1022

Silicon PNP epitaxial planer type

For high-frequency amplification

Complementary to 2SC2295

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

Ratings

–30

–20

–5

–30

200

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

Noise figure

Reverse transfer impedance

Common emitter reverse transfer

capacitance

Symbol

*

NF

Conditions

f = 10.7MHz

min

70

150

typ

– 0.1

– 0.7

300

2.8

22

1.2

max

– 0.1

–100

–10

220

Unit

µA

µA

µA

V

V

MHz

dB

Ω

pF

Rank

B

C

70 ~ 140

110 ~ 220

Marking Symbol

EB

EC