NCE65R360D datasheet(4/8 Pages) VBSEMI

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Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 9 - Maximum Safe Operating Area

Fig. 10 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Temperature vs. Drain-to-Source Voltage

Qg, Total Gate Charge (nC)

120

DS = 520 V

DS = 325 V

DS = 130 V

150

VSD, Source-Drain Voltage (V)

0.1

100

0.2

0.4

0.6

0.8

1.2

1.4

1.6

J = 150 °C

J = 25 °C

GS = 0 V

DS, Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

DM Limited

BVDSS Limited

100 μs

1 ms

10 ms

TC = 25 °C

TJ = 150 °C

Single Pulse

Limited by R

DS(on)*

0.01

0.1

100

1000

Operation in this Area

Limited by R

DS(on)

TJ, Case Temperature (°C)

100

125

150

TJ, Junction Temperature (°C)

- 60

160

- 40 - 20

80 100 120 140

650

675

700

725

750

775

800

825

850

ID = 10 mA

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NCE65R360D

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