NCE2012 datasheet(3/9 Pages) VBSEMI

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =2 V

DS - Drain-to-Source Voltage (V)

VGS = 10 V thru 3 V

0.0040

0.0046

0.0052

0.0058

0.0064

0.0070

1020304050

VGS = 10 V

VGS = 4.5 V

D - Drain Current (A)

13263952

ID =10A

VDS =15 V

VDS =10 V

VDS =5 V

g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.6

1.2

1.8

2.4

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

GS - Gate-to-Source Voltage (V)

Crss

900

1800

2700

3600

4500

Ciss

Coss

DS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

- 50

- 25

100

125

150

VGS =4.5 V

ID =10A

VGS = 10 V

1.7

J - Junction Temperature (°C)

0.0

0.4

0.8

1.2

1.6

2.0

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NCE2012

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