Power Transistors

1

2SA2004

Silicon PNP epitaxial planer type

For power amplification

I Features

• High forward current transfer ratio h

FE

• Satisfactory linearity of forward current transfer ratio h

FE

• Dielectric breakdown voltage of the package: > 5 kV

• High-speed switching

I Absolute Maximum Ratings T

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to base voltage

−60

V

Collector to emitter voltage

−60

V

Emitter to base voltage

−5V

Peak collector current

−16

A

Collector current

−8A

Collector power

= 25°CP

C

20

W

dissipation

2.0

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

I Electrical Characteristics T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

= −60 V, I

E

= 0

−100

µA

= −60 V, I

E

= 0

−100

µA

Collector to emitter voltage

−60

V

Forward current transfer ratio

= −2 V, I

C

= − 0.1 A

100

230

= −2 V, I

C

= −5 A

30

Collector to emitter saturation voltage

−1.2

V

Base to emitter saturation voltage

= −5 A, I

C

= − 0.25 A

−1.7

V

Turn-on time

= −4 A, I

B1

= −400 mA

0.2

0.5

µs

Storage time

0.1

0.15

µs

Fall time

0.5

1.0

µs

12

3

1: Base

2: Collector

3: Emitter

TO-220D Package