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2SC5346 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC5346 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Transistor 2SA1982 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC5346 s Features q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage of a 20 to 40W output amplifier. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings –150 –150 –5 –100 –50 1 150 –55~+150 Unit V V V mA mA W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency Collector output capacitance Symbol ICBO VCEO VEBO hFE *1 VCE(sat) NV fT Cob Conditions VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –150 –5 130 typ 150 200 max –1 330 –1 300 5 Unit µA V V V mV MHz pF Unit: mm 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5 ±0.1 2.5 ±0.5 2.5±0.5 6.9 ±0.1 1.05 ±0.05 (1.45) 4.0 0.7 0.8 0.65 max. 0.45 +0.1 –0.05 3 2 1 *1h FE Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 1.2 ±0.1 0.65 max. 0.45 0.1 0.05 + – Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type) |
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