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2SA683 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SA683 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 s Features q Complementary pair with 2SC1383 and 2SC1384. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9 ±0.2 2.54 ±0.15 0.7 ±0.1 4.9 ±0.2 0.45 +0.2 –0.1 1.27 1.27 0.45 +0.2 –0.1 13 2 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 2SA683 2SA684 2SA683 2SA684 s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 * hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –500mA VCE = –5V, IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –30 –60 –25 –50 –5 85 50 typ – 0.2 – 0.85 200 20 max – 0.1 340 – 0.4 –1.2 30 Unit µA V V V V V MHz pF 2SA683 2SA684 2SA683 2SA684 *h FE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 |
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