SEMICONDUCTOR

TECHNICAL DATA

FTK1012

2014. 01. 13

1/6

Revision No : 0

SOT-523

ORDERING INFORMATION

Device

Shipping

3000/Tape&Reel

FTK1012

Marking

MARKING DIAGRAM

B = Specific Device Code

M = Month Code

A

1

3

2

A

FEATURES

TrenchFET Power MOSFET: 1.8-V Rated

Gate-Source ESD Protected: 2000 V

High-Side Switching

Low On-Resistance: 0.7Ω

Low Threshold: 0.8 V (typ)

Fast Switching Speed: 10ns

BENEFITS

Ease in Driving Switches

Low Offset (Error) Voltage

Low-Voltage Operation

High-Speed Circuits

Low Battery Voltage Operation

APPLICATIONS

Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

N-Channel 1.8-V (G-S) MOSFET

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

6

V

600

500

400

350

mA

Pulsed Drain Current

1000

mA

Continuous Source Current (diode conduction)

-275

-250

275

250

mW

Maximum Power Dissipation

160

140

Operating Junction and Storage Temperature Range

−55 to 150

C

Gate-Source ESD Rating (HBM, Method 3015)

ESD

2000

V

Notes

d.

Pulse width limited by maximum junction temperature.

e.

Surface Mounted on FR4 Board.

S- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

Continuous Drain Current (TJ = 150℃)b

(Top View)

Drain

Gate

3

1

2

Source