2SB1221 datasheet(1/3 Pages) PANASONIC

Part #	2SB1221

Description	Silicon PNP epitaxial planer type

PDF	3 Pages

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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1

Transistor

2SB1221

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SC3941

s Features

q

Low collector to emitter saturation voltage VCE(sat).

q

Allowing supply with the radial taping.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

TO–92NL Package

5.0

±0.2

1.27

123

1.27

4.0

±0.2

0.45

+0.15

–0.1

0.45

+0.15

–0.1

0.7

±0.1

2.54

±0.15

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–250

–200

–5

–100

–70

1

150

–55 ~ +150

Unit

V

mA

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCEO

VEBO

hFE

*

VCE(sat)

fT

Cob

Conditions

VCB = –12V, IE = 0

IC = –100µA, IB = 0

IE = –1µA, IC = 0

VCE = –10V, IC = –5mA

IC = –50mA, IB = –5mA

VCB = –10V, IE = 10mA, f = 200MHz

VCB = –10V, IE = 0, f = 1MHz

min

–200

–5

60

50

typ

80

5

max

–2

220

–1.5

10

Unit

µA

V

MHz

pF

*h

FE Rank classification

Rank

Q

R

hFE

60 ~ 150

100 ~ 220

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